Mechanism of cyclotron resonance induced conductivity in n-GaAs

Theory of spin hall conductivity in n-doped GaAs.

We develop a theory of extrinsic spin currents in semiconductors, resulting from spin-orbit coupling at charged scatterers, which leads to skew-scattering and side-jump contributions to the spin-Hall conductivity. Applying the theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with experiments by Kato et al. [Science 306, 1910 (2004)].

Electronic states and cyclotron resonance in n-type InMnAs

We present a theory for electronic and magneto-optical properties of n-type In12xMnxAs magnetic alloy semiconductors in a high magnetic field Bi ẑ . We use an eight-band Pidgeon-Brown model generalized to include the wave vector (kz) dependence of the electronic states as well as s-d and p-d exchange interactions with localized Mn d electrons. Calculated conduction-band Landau levels exhibit ef...

OBSERVATION OF OSCILLATORY LINEWIDTH IN THE CYCLOTRON RESONANCE OF GaAs-Al~Gal_xAs HETEROSTRUCTURES

Spectroscopic ellipsometric monitoring of electron cyclotron resonance plasma etching of GaAs and AlGaAs

Spectroscopic ellipsometric monitoring of electron cyclotron resonance plasma etching of GaAs and AlGaAs" (1995). Faculty Publications from the Department of Electrical and Computer Engineering. 73. In situ real time spectroscopic ellipsometry measurements were made during electron cyclotron resonance plasma etching of radio frequency biased GaAs and AlGaAs samples. Gas mixtures used were CH 4 ...

Cyclotron resonance in ultra-low-hole-density narrow p-type GaAs/„Al,Ga...As quantum wells